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300ma rf uldo regulator ap2210 data sheet 1 jul. 2011 rev. 1. 5 bcd semiconductor manufacturing limited general description the ap2210 is a 300ma uldo regulator which pro- vides very low noise, ultra low dropout voltage (typically 250mv at 300ma), very low standby current (1 a maximum) and excellent power supply ripple rejection (psrr 75db at 100hz) in battery powered applications, such as handse ts, pdas and in noise sen- sitive applications, such as rf electronics. the ap2210 also features individual logic compatible enable/shutdown control inputs, a low power shutdown mode for extended battery li fe, over current protection, over temperature protection, as well as reversed-bat- tery protection. the ap2210 has 2.5v, 2.8v, 3.0v and 3.3v versions. the ap2210 is available in space saving sot-23-3 and sot-23-5 packages. features up to 300ma output current excellent esr stability low standby current low dropout voltage: v drop =250mv at 300ma high output accuracy: 1% good ripple rejection ability: 75db at 100hz and i out =100 a tight load and line regulation low temperature coefficient over current protection thermal protection reverse-battery protection logic-controlled enable applications cellular phones cordless phones wireless communicators pdas/palmtops pc mother board consumer electronics sot-23-5 figure 1. package types of ap2210 sot-23-3
300ma rf uldo regulator ap2210 data sheet 2 jul. 2011 rev. 1. 5 bcd semiconductor manufacturing limited figure 2. pin configuration of ap2210 (top view) (sot-23-5) pin description pin number pin name function sot-23-3 sot-23-5 1 2 gnd ground 25v out regulated output voltage 31v in input voltage 3 en enable input: cmos or ttl compat ible input. logic high=enable, logic low=shutdown 4 byp bypass capacitor for low noise operation k package pin configuration byp gnd en v out v in 1 3 5 2 4 1 3 2 (sot-23-3) gnd v out v in n package
300ma rf uldo regulator ap2210 data sheet 3 jul. 2011 rev. 1. 5 bcd semiconductor manufacturing limited figure 3. functional block diagram of ap2210 + - bandgap ref. current limit thermal shutdown v in byp en gnd v out functional block diagram (4) circuit type package e1: lead free g1: green ap2210 - tr: tape and reel 2.5: fixed output 2.5v ordering information package temperature range part number marking id packing type lead free green lead free green sot-23-3 -40 to 125 o c ap2210n-2.5tre1 ap2210n-2.5trg1 eh2 gh2 tape & reel ap2210n-2.8tre1 ap2210n-2.8trg1 eh3 gh3 tape & reel ap2210n-3.0tre1 ap2210n-3.0trg1 eh4 gh4 tape & reel ap2210n-3.3tre1 ap2210n-3.3trg1 eh5 gh5 tape & reel sot-23-5 -40 to 125 o c ap2210k-2.5tre1 ap2210k-2.5trg1 e5c g5c tape & reel ap2210k-2.8tre1 ap2210k-2.8trg1 e5f g5f tape & reel ap2210k-3.0tre1 ap2210k-3.0trg1 e5h g5h tape & reel ap2210k-3.3tre1 ap2210k-3.3trg1 e5k g5k tape & reel 3.0: fixed output 3.0v 3.3: fixed output 3.3v 2.8: fixed output 2.8v k: sot-23-5 n: sot-23-3 a (b) a for sot-23-3 b for sot-23-5 1 (2) 2 (5) 3 (1) (3) bcd semiconductor's pb-free pr oducts, as designated with "e1" suffix in the part number, are rohs compliant. products with "g1" suffix are available in green packages.
300ma rf uldo regulator ap2210 data sheet 4 jul. 2011 rev. 1. 5 bcd semiconductor manufacturing limited parameter symbol value unit supply input voltage v in 15 v enable input voltage v en 15 v power dissipation p d internally limited (thermal protection) w lead temperature (soldering, 10sec) t lead 260 o c junction temperature t j 150 o c storage temperature t stg -65 to 150 o c esd (machine model) esd 300 v thermal resistance (no heatsink) ja sot-23-3 200 o c/w sot-23-5 200 note 1: stresses greater than those listed under "absolute maximum ratings" may ca use permanent damage to the device. these are stress ratings only, and functi onal operation of the device at these or any other conditions be yond those indicated under "recommended operating c onditions" is not implie d. exposure to "absolute maximum ratings" for extended periods may affect device reliability. parameter symbol min max unit supply input voltage v in 2.5 13.2 v enable input voltage v en 0 13.2 v operating junction temperature t j -40 125 o c recommended operating conditions absolute maximum ratings (note 1)
300ma rf uldo regulator ap2210 data sheet 5 jul. 2011 rev. 1. 5 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage accuracy ? v out /v out variation from specified v out -1 1 % -2 2 output voltage temperature coefficient (note 3) ? v out / ? t 120 v/ o c ( ? v out /v out )/ ? t 48 ppm/ o c line regulation v rline v in = 3.5v to 13.2v 1.5 4.5 mv 12 load regulation (note 4) v rload i out = 0.1ma to 300ma 16 mv 30 dropout voltage (note 5) v drop i out =100 a 15 50 mv 70 i out =50ma 110 150 230 i out =100ma 140 250 300 i out =150ma 165 275 350 i out =300ma 250 400 500 standby current i std v en 0.4v (shutdown) 0.01 1 a v en 0.18v (shutdown) 5 ground pin current (note 6) i gnd v en 2.0v, i out =100 a 100 150 a 180 v en 2.0v, i out =50ma 350 600 800 v en 2.0v, i out =150ma 1.3 1.9 ma 2.5 v en 2.0v, i out =300ma 410 15 ripple rejection psrr f=100hz, i out =100 a75db current limit i limit v out =0v 450 900 ma output noise e no i out =50ma, c out =2.2 f, 100pf from byp to gnd 260 hz nv / v in =3.5v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over -40 o c t j 125 o c (note 2), unless otherwise specified. electrical characteristics ap2210-2.5 electrical characteristics
300ma rf uldo regulator ap2210 data sheet 6 jul. 2011 rev. 1. 5 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit enable input logic-low voltage v il regulator shutdown 0.4 v 0.18 enable input logic-high voltage v ih regulator enabled 2.0 v enable input logic-low current i il v il 0.4v 0.01 1 a v il 0.18v 2 enable input logic-high current i ih v il 2.0v 5 20 a v il 2.0v 25 note 2: specifications in bold type are limited to -40 o c t j 125 o c. limits over temperature are guaranteed by design, but not tested in production. note 3: output voltage temperature coeffi cient is defined as the worst case voltage change divided by the total temperature range. note 4: regulation is measured at consta nt junction temperature using low duty cycl e pulse testing. parts are tested for load regulation in the load range from 0.1ma to 300ma. changes in output vo ltage due to heating effect s are covered by the thermal regulation specification. note 5: dropout voltage is defined as the input to output differential at which the output voltage drops 1% (t j =25 o c) or 2% (- 40 o c t j 125 o c) below its nominal value meas ured at 1v differential. note 6: ground pin current is the regulator quiescent current plus pass transistor base current. the total current drawn from t he supply is the sum of the load cu rrent plus the ground pin current. electrical characteristics (continued) v in =3.5v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over -40 o c t j 125 o c (note 2), unless otherwise specified. ap2210-2.5 electrical characteristics
300ma rf uldo regulator ap2210 data sheet 7 jul. 2011 rev. 1. 5 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage accuracy ? v out /v out variation from specified v out -1 1 % -2 2 output voltage temperature coefficient (note 3) ? v out / ? t 120 v/ o c ( ? v out /v out )/ ? t 42.8 ppm/ o c line regulation v rline v in = 3.8v to 13.2v 1.5 4.5 mv 12 load regulation (note 4) v rload i out = 0.1ma to 300ma 16 mv 30 dropout voltage (note 5) v drop i out =100 a 15 50 mv 70 i out =50ma 110 150 230 i out =100ma 140 250 300 i out =150ma 165 275 350 i out =300ma 250 400 500 standby current i std v en 0.4v (shutdown) 0.01 1 a v en 0.18v (shutdown) 5 ground pin current (note 6) i gnd v en 2.0v, i out =100 a 100 150 a 180 v en 2.0v, i out =50ma 350 600 800 v en 2.0v, i out =150ma 1.3 1.9 ma 2.5 v en 2.0v, i out =300ma 410 15 ripple rejection psrr f=100hz, i out =100 a75db current limit i limit v out =0v 450 900 ma output noise e no i out =50ma, c out =2.2 f, 100pf from byp to gnd 260 hz nv / v in =3.8v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over -40 o c t j 125 o c (note 2), unless otherwise specified. ap2210-2.8 electrical characteristics electrical characteristics (continued)
300ma rf uldo regulator ap2210 data sheet 8 jul. 2011 rev. 1. 5 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit enable input logic-low voltage v il regulator shutdown 0.4 v 0.18 enable input logic-high voltage v ih regulator enabled 2.0 v enable input logic-low current i il v il 0.4v 0.01 1 a v il 0.18v 2 enable input logic-high current i ih v il 2.0v 5 20 a v il 2.0v 25 note 2: specifications in bold type are limited to -40 o c t j 125 o c. limits over temperature are guaranteed by design, but not tested in production. note 3: output voltage temperature coeffi cient is defined as the worst case voltage change divided by the total temperature range. note 4: regulation is measured at consta nt junction temperature using low duty cycl e pulse testing. parts are tested for load regulation in the load range from 0.1ma to 300ma. changes in output vo ltage due to heating effect s are covered by the thermal regulation specification. note 5: dropout voltage is defined as the input to output differential at which the output voltage drops 1% (t j =25 o c) or 2% (- 40 o c t j 125 o c) below its nominal value meas ured at 1v differential. note 6: ground pin current is the regulator quiescent current plus pass transistor base current. the total current drawn from t he supply is the sum of the load cu rrent plus the ground pin current. v in =3.8v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over -40 o c t j 125 o c (note 2), unless otherwise specified. ap2210-2.8 electrical characteristics electrical characteristics (continued)
300ma rf uldo regulator ap2210 data sheet 9 jul. 2011 rev. 1. 5 bcd semiconductor manufacturing limited v in =4v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over -40 o c t j 125 o c (note 2), unless otherwise specified. ap2210-3.0 electrical characteristics electrical characteristics (continued) parameter symbol conditions min typ max unit output voltage accuracy ? v out /v out variation from specified v out -1 1 % -2 2 output voltage temperature coefficient (note 3) ? v out / ? t 120 v/ o c ( ? v out /v out )/ ? t 40 ppm/ o c line regulation v rline v in = 4v to 13.2v 1.5 4.5 mv 12 load regulation (note 4) v rload i out = 0.1ma to 300ma 16 mv 30 dropout voltage (note 5) v drop i out =100 a 15 50 mv 70 i out =50ma 110 150 230 i out =100ma 140 250 300 i out =150ma 165 275 350 i out =300ma 250 400 500 standby current i std v en 0.4v (shutdown) 0.01 1 a v en 0.18v (shutdown) 5 ground pin current (note 6) i gnd v en 2.0v, i out =100 a 100 150 a 180 v en 2.0v, i out =50ma 350 600 800 v en 2.0v, i out =150ma 1.3 1.9 ma 2.5 v en 2.0v, i out =300ma 410 15 ripple rejection psrr f=100hz, i out =100 a75db current limit i limit v out =0v 450 900 ma output noise e no i out =50ma, c out =2.2 f, 100pf from byp to gnd 260 hz nv /
300ma rf uldo regulator ap2210 data sheet 10 jul. 2011 rev. 1. 5 bcd semiconductor manufacturing limited note 2: specifications in bold type are limited to -40 o c t j 125 o c. limits over temperature are guaranteed by design, but not tested in production. note 3: output voltage temperature coeffi cient is defined as the worst case voltage change divided by the total temperature range. note 4: regulation is measured at consta nt junction temperature using low duty cycl e pulse testing. parts are tested for load regulation in the load range from 0.1ma to 300ma. changes in output vo ltage due to heating effect s are covered by the thermal regulation specification. note 5: dropout voltage is defined as the input to output differential at which the output voltage drops 1% (t j =25 o c) or 2% (- 40 o c t j 125 o c) below its nominal value meas ured at 1v differential. note 6: ground pin current is the regulator quiescent current plus pass transistor base current. the total current drawn from t he supply is the sum of the load cu rrent plus the ground pin current. electrical characteristics (continued) v in =4v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over -40 o c t j 125 o c (note 2), unless otherwise specified. ap2210-3.0 electrical characteristics parameter symbol conditions min typ max unit enable input logic-low voltage v il regulator shutdown 0.4 v 0.18 enable input logic-high voltage v ih regulator enabled 2.0 v enable input logic-low current i il v il 0.4v 0.01 1 a v il 0.18v 2 enable input logic-high current i ih v il 2.0v 5 20 a v il 2.0v 25
300ma rf uldo regulator ap2210 data sheet 11 jul. 2011 rev. 1. 5 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage accuracy ? v out /v out variation from specified v out -1 1 % -2 2 output voltage temperature coefficient (note 3) ? v out / ? t 120 v/ o c ( ? v out /v out )/ ? t 36.3 ppm/ o c line regulation v rline v in = 4.3v to 13.2v 1.5 4.5 mv 12 load regulation (note 4) v rload i out = 0.1ma to 300ma 16 mv 30 dropout voltage (note 5) v drop i out =100 a 15 50 mv 70 i out =50ma 110 150 230 i out =100ma 140 250 300 i out =150ma 165 275 350 i out =300ma 250 400 500 standby current i std v en 0.4v (shutdown) 0.01 1 a v en 0.18v (shutdown) 5 ground pin current (note 6) i gnd v en 2.0v, i out =100 a 100 150 a 180 v en 2.0v, i out =50ma 350 600 800 v en 2.0v, i out =150ma 1.3 1.9 ma 2.5 v en 2.0v, i out =300ma 410 15 ripple rejection psrr f=100hz, i out =100 a75db current limit i limit v out =0v 450 900 ma output noise e no i out =50ma, c out =2.2 f, 100pf from byp to gnd 260 hz nv / electrical characteristics (continued) v in =4.3v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over -40 o c t j 125 o c (note 2), unless otherwise specified. ap2210-3.3 electrical characteristics
300ma rf uldo regulator ap2210 data sheet 12 jul. 2011 rev. 1. 5 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit enable input logic-low voltage v il regulator shutdown 0.4 v 0.18 enable input logic-high voltage v ih regulator enabled 2.0 v enable input logic-low current i il v il 0.4v 0.01 1 a v il 0.18v 2 enable input logic-high current i ih v il 2.0v 5 20 a v il 2.0v 25 note 2: specifications in bold type are limited to -40 o c t j 125 o c. limits over temperature are guaranteed by design, but not tested in production. note 3: output voltage temperature coeffi cient is defined as the worst case voltage change divided by the total temperature range. note 4: regulation is measured at consta nt junction temperature using low duty cycl e pulse testing. parts are tested for load regulation in the load range from 0.1ma to 300ma. changes in output vo ltage due to heating effect s are covered by the thermal regulation specification. note 5: dropout voltage is defined as the input to output differential at which the output voltage drops 1% (t j =25 o c) or 2% (- 40 o c t j 125 o c) below its nominal value meas ured at 1v differential. note 6: ground pin current is the regulator quiescent current plus pass transistor base current. the total current drawn from t he supply is the sum of the load cu rrent plus the ground pin current. electrical characteristics (continued) v in =4.3v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over -40 o c t j 125 o c (note 2), unless otherwise specified. ap2210-3.3 electrical characteristics
300ma rf uldo regulator ap2210 data sheet 13 jul. 2011 rev. 1. 5 bcd semiconductor manufacturing limited -60 -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i out =50ma i out =100ma i out =150ma i out =300ma ground pin current (ma) junction temperature ( o c) ap2210-3.0 v in =4v,c in =1.0 f,c out =2.2 f typical performance characteristics -50 -25 0 25 50 75 100 125 2.9850 2.9875 2.9900 2.9925 2.9950 2.9975 3.0000 3.0025 3.0050 3.0075 3.0100 3.0125 3.0150 output voltage (v) junction temperature ( o c) ap2210-3.0 v in =4v, i out =10ma c in =1.0 f, c out =2.2 f figure 4. output voltage vs. junction temperature figure 5. dropout voltage vs. junction temperature figure 6. ground pin current vs. output current figure 7. ground pi n current vs. junction temperature 0 50 100 150 200 250 300 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 ground pin current (ma) output current (ma) t a =25 o c c in =1.0 f, c out =2.2 f -60 -40 -20 0 20 40 60 80 100 120 140 0 50 100 150 200 250 300 350 400 450 500 550 c in =1.0 f, c out =2.2 f dropout voltage (mv) junction temperature ( o c) i out =50ma i out =100ma i out =150ma i out =300ma
300ma rf uldo regulator ap2210 data sheet 14 jul. 2011 rev. 1. 5 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 8. enable current vs. junction temperatur e figure 9. enable voltage vs. junction temperature -50 -25 0 25 50 75 100 125 0 2 4 6 8 10 12 14 16 18 20 enable current ( a) junction temperature ( o c) ap2210-3.0 v in =4v, c in =1.0 f c out =2.2 f, i out =100 a v en =1.8v v en =2.0v v en =3.0v v en =3.7v -50 -25 0 25 50 75 100 125 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v en =logic high v en =logic low ap2210-3.0 c in =1.0 f, c out =2.2 f v in =4v, i out =100 a enable voltage (v) junction temperature ( o c) 10 100 1k 10k 100k 1m 10m 10 1 0.1 0.01 0.001 frequency (hz) ap2210-3.0 v in =4.5v, i out =10ma c in =1.0 f, c out =2.2 f c byp =100pf output noise ( ) 0.0001 v/ hz figure 10. output noise vs. frequency figure 11. line transient (conditions: v in =4 to 5v, v en =2v, i out =1m a, c out =2.2 f ) ap2210-3.0 ? v out (50mv/div) v in (0.5v/div) 4 4.5 0 50 time (20 s/div) 5 5.5 -50 -100
300ma rf uldo regulator ap2210 data sheet 15 jul. 2011 rev. 1. 5 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 13. v en vs. v out (conditions: v en =0 to 2v, v in =4v, i out =30ma, c in =1.0 f, c out =2.2 f ) ap2210-3.0 figure 14. psrr vs. frequency 0 2 0 2 v out (2v/div) v en (2v/div) time (40 s/div) figure 12. load transient (conditions: v in =4v, v en =2v, i out =10ma to 300ma, c in =1.0 f, c out =2.2 f ) ap2210-3.0 ? v out (50mv/div) 0 -50 0 i out (200ma/div) 200 time (20 s/div) 400 600 50 -100 4 6 -2 -4 10 100 1k 10k 100k 1m 0 10 20 30 40 50 60 70 80 90 100 psrr (db) frequency (hz) ap2210-3.0 v in =4v, v ripple =1v pp i out =10ma, c out =2.2 f figure 15. power dissipation vs. ambient temperature 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 power dissipation (w) ambient temperature ( o c) ap2210-3.0 sot-23-3 package no heatsink
300ma rf uldo regulator ap2210 data sheet 16 jul. 2011 rev. 1. 5 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 17. esr vs. output current 50 100 150 200 250 300 0.01 0.1 1 10 100 1000 esr ( ? ) output current (ma) c out =1 f no bypass capacitor stable area figure 18. esr vs. output current 50 100 150 200 250 300 0.01 0.1 1 10 100 1000 esr ( ? ) output current (ma) c out =2.2 f no bypass capacitor stable area 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 power dissipation (w) ambient temperature ( o c) ap2210-3.0 sot-23-5 package no heatsink figure 16. power dissipation vs. ambient temperature figure 19. esr vs. output current 50 100 150 200 250 300 0.01 0.1 1 10 100 1000 esr ( ? ) output current (ma) c out =4.7 f no bypass capacitor stable area
300ma rf uldo regulator ap2210 data sheet 17 jul. 2011 rev. 1. 5 bcd semiconductor manufacturing limited figure 20. typical application of ap2210 (note 7) typical application note 7: dropout voltage is 250mv when t a =25 o c. in order to obtain a normal output voltage, v out +0.25v is the minimum input voltage which will results a low ps rr, imposing a bad influence on system. therefore, th e recommended input voltage is v out +1v to 13.2v. for ap2210-3.0 version, it s input voltage can be set from 4v(v out +1v) to 13.2v. en gnd ap2210-3.0 v in v out byp v in v in =4.0v c in 1.0 f c out 2.2 f v out =3.0v v out 100pf c byp gnd ap2210-3.0 v in v out v in v in =4.0v c in 1.0 f c out 2.2 f v out =3.0v v out
300ma rf uldo regulator ap2210 data sheet 18 jul. 2011 rev. 1. 5 bcd semiconductor manufacturing limited input capacitor a 1 f minimum capacitor is recommended to be placed between v in and gnd. output capacitor it is required to prevent oscillation. 1.0 f minimum is recommended when c byp is unused. 2.2 f mini- mum is recommended when c byp is 100pf. the out- put capacitor may be increas ed to improve transient response. noise bypass capacitor bypass capacitor is connected to the internal voltage reference. a small capacito r connected from byp to gnd make this reference quiet, resulting in a significant reduction in output noise, but the esr stable area will be narrowed. in order to keep the output stability, it is recommended to use the bypass capacitor no more than 100pf. the start-up speed of the ap2210 is inversely proportional to the value of reference bypass capacitor. in some cases, if output noise is not a major concern and rapid turn-on is necessary, omit c byp and leave byp open. power dissipation thermal shutdown may take place if exceeding the maximum power dissipation in application. under all possible operating conditions, the junction tempera- ture must be within the range specified under abso- lute maximum ratings to avoid thermal shutdown. to determine if the power dissipated in the regulator reaches the maximum power dissipation (see figure 16, 17), using: t j = p d * ja + t a p d =(v in -v out )*i out +v in *i gnd where: t j t j(max) , t j(max) is absolute maximum rat- ings for the junction temperature; v in *i gnd can be ignored due to its small value. t j(max) is 150 o c , ja is 200 o c /w, no heatsink is required since the package alone will dissipate enough heat to satisfy these requirements unless the calculated value for power dissipation exceeds the limit. example (3.0v version): i out =300ma, t a =50 o c, v in(max) is: (150 o c -50 o c )/(0.3a*200 o c/w )+3.0v=4.67v therefore, for good performance, please make sure that input voltage is less than 4.67v without heatsink when t a =50 o c. application information
300ma rf uldo regulator ap2210 data sheet 19 jul. 2011 rev. 1. 5 bcd semiconductor manufacturing limited mechanical dimensions sot-23-3 unit: mm(inch) 2.820(0.111) 3.020(0.119) 2.650(0.104) 2.950(0.116) 0.950(0.037) typ 0.300(0.012) 0.500(0.020) 1.500(0.059) 1.700(0.067) 1.800(0.071) 2.000(0.079) 0.300(0.012) 0.600(0.024) 0.100(0.004) 0.200(0.008) 0.000(0.000) 0.150(0.006) 0.900(0.035) 1.300(0.051) 1.450(0.057) max. 0.200(0.008) 0 8
300ma rf uldo regulator ap2210 data sheet 20 jul. 2011 rev. 1. 5 bcd semiconductor manufacturing limited mechanical dimens ions (continued) sot-23-5 unit: mm(inch) 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 0.300(0.012) 0.950(0.037) 0 . 9 0 0 ( 0 . 0 3 5 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.020(0.119) 1 . 7 0 0 ( 0 . 0 6 7 ) 2 . 9 5 0 ( 0 . 1 1 6 ) 0.400(0.016) 0 . 1 5 0 ( 0 . 0 0 6 ) 1 . 3 0 0 ( 0 . 0 5 1 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p 1 . 4 5 0 ( 0 . 0 5 7 ) m a x
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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